Selection matrix and integration strategies
One of the key innovations in the RHODaS project is the design of a 3-level T-type converter, a topology that currently lacks modules with Silicon Carbide (SiC) and Gallium Nitride (GaN) technology. As a result, the project is exploring alternative options to build the converter using GaN and SiC technologies that will greatly improve efficiency, thermal performance, and increase power density by both reducing the size and weight of the converter.
The new report published by RHODaS provides valuable insights into the material specifications, component selection, and integration considerations for the RHODAS project's power converters, and highlights the project's focus on SiC and GaN technologies, driver requirements, passive components, and the control system.
The selection of SiC transistors for the converter is preferred due to their high-power density and low on-resistance, and options such as discrete GaN semiconductors are explored. Several driver options for controlling the high-power hybrid inverter that must meet specific requirements, including crosstalk protection and Miller clamp functionality, are presented for SiC and GaN devices, taking into account factors such as isolation voltages, safety features, and drive currents.
In addition, passive components, such as capacitors and interfaces, and the importance of minimising the commutation loop and choosing components with resonant frequencies that do not coincide with switching harmonics is discussed. And the design of the control printed circuit board (PCB) is detailed which will accommodate various sensors and interface inputs for accurate control and monitoring of the power converter system.
The full report can be downloaded here.